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Applications for Bonding Technologies

788 bytes added, 13:42, 10 January 2023
Electroless Metal Deposition on Printed Circuit Boards
== Wire Bonding==
Wire bonding is the manufacturing process for creating metallurgical bond connections between a thin wire (12.5 – 50 µm for gold fine-wires and 150 – 500 µm for aluminum thick-wires) and a suitably coated circuit carrier through friction welding. In principle, this method consists of pressure welding with the help of ultrasound. The metallurgical bond is mainly caused by frictional heat, created through the relative movement between the two bonding partner materials. To achieve high reliability over longer time and under difficult environmental conditions, high quality requirements regarding material and mechanical strength properties must be met by the surfaces of the bonding partners.
Multiple silicon chips are combined to a functional unit on a circuit carrier (for example PCB board, DCB substrate, thick film ceramic) which is mostly encased in a hybrid housing for environmental protection. The metallic conductors attached inside the housing then serve as the connection to the outside. If a higher current carrying capacity is required, such as in power electronics, the Al thick wire connection is used (<xr id="fig:Bond_connection_Al_thick_wire_on_clad_AlSi"/><!--(Fig. 9.1)-->).<figure id=Wire Bonding=="fig:Bond_connection_Al_thick_wire_on_clad_AlSi">[[File:Bond connection Al thick wire on clad AlSi.jpg|right|thumb|Figure 1: Bond connection: Al thick-wire on clad AlSi; (a) Macro photograph, b) micro structure with ruptured wire]]</figure>
Wire bonding is the manufacturing process for creating metallurgical bond connections between a thin wire (12.5 – 50 µm ==AlSi Clad Strip for Bond Connections==Besides electroplated or chemically deposited gold finecoatings, AlSi clad semi-wires finished materials are used for layered systems on circuit carriers and 150 – 500 µm in hybrid housings (or for aluminum thick-wireslead frames) and a suitably coated circuit carrier through friction welding. In principle this process consists These strip materials are manufactured by cold roll cladding of pressure welding with the aid an AlSi1 alloy material onto Cu or Cu alloy strip (<xr id="fig:Examples of ultrasound. The metallurgical AlSi clad strips for bond is mainly caused by frictional heat created through the relative movement between the two bonding partner materials. To achieve high reliability over longer time and under difficult environmental conditions high quality requirements regarding material and mechanical strength properties must be met by the surfaces connections"/>) (see chapter [[Manufacturing_of_Semi-Finished_Materials|Manufacturing of the bonding partnersSemi-Finished Materials]]).
Multiple silicon chips are combined to To achieve a functional unit on strong metallurgical bond between these two components, a circuit suitable surface preparation of the carrier (for example PCB board, DCB substratestrip and a high degree of deformation are required, thick film ceramic) which is mostly encased in a hybrid housing for environmental protection. The metallic conductors mounted inside followed by diffusion annealing of the housing then serve as connections to the outside. If higher current carrying capacity is needed, as for example in power electronics, Al thick-wire bonding is employed ''(Fig. 9.1)''clad strip.
2 bilderDepending on the requirements of the assembly technology for the final product, i.e. using connectors or soldering attachment, the clad strips are coated in the terminal area with a suitable surface layer with either an electroplated hard gold (AuCo0.3) layer or selectively by electroplating or hot dip tinning with pure tin or a tin alloy. To ensure the best bond properties during the coating process, the AlSi surface is protected against corrosion by masking during this processing step.
Fig. 9.1'''Examples of AlSi clad strips for bond connections'''<figure id="fig: Bond connectionExamples of AlSi clad strips for bond connections">[[File: Al thick-wire on Examples of AlSi clad strips for bond connections.jpg|left|Figure 2: Examples of AlSi; (a) Macro photograph,clad strips for bond connections]]b) micro structure with ruptured wire.</figure><div class="clear"></div>'''Materials'''
{| class="twocolortable" style= AlSi Clad Strip for Bond Connections=="text-align: left; font-size: 12px;width:35%"|-|Inlay cladding|AISi 1Besides electroplated or chemically deposited gold coatings AlSi clad semi|- finished |Substrate materials are used for layered systems on circuit carriers and in hybrid housings (or for lead frames). These strip materials are manufactured by cold roll cladding of an AlSi1 alloy material onto |Cu or Cu alloy strip (see chapter 3.2.1)., CuFe2P, CuSn6 others|}
To achieve a strong metallurgical bond between these two components a suitable surface preparation of the carrier strip and a high degree of deformation are required, followed by diffusion annealing of the clad strip.'''Dimensions (typical values)'''
Depending on the requirements of the assembly technology for the final product, i[[File:Dimensions typical-values.e. using connectors or soldering attachment, the clad strips are coated in the terminal area with a suitable surface layer with either an electroplated hard gold jpg|left|Dimensions (AuCo0.3typical values) layer or selectively by electroplating or hot dip tinning with pure tin or a tin alloy. To ensure the best bond properties during the coating process the AlSi surface is protected against corrosion by masking during this processing step.]]<div class="clear"></div>
*'''Examples of AlSi clad strips for bond connections''' bild *'''Materials''' <table border="1" cellspacing="0" style="border-collapse:collapse"><tr><td><p class="s7">Inlay cladding</p></td><td><p class="s7">AISi1</p></td></tr><tr><td><p class="s7">Substrate materials</p></td><td><p class="s7">Cu, CuFe2P, CuSn6 others</p></td></tr></table> *'''Dimensions (typical values)''' bild B : max. 150 mmd: 0.2 - 1.5 mms : 10 - 70 μmb : max. 60 mm *'''Quality Criteria and Tolerances'''
Mechanical strength and dimensional tolerances for AlSi clad strips mostly follow the standards EN 1652, EN 1654, and EN 1758 for Cu and Cu alloys. Depending on the end application the following parameters for the coating layer are tested for and documented during manufacturing:
*Layer thickness *Adhesion strength*Bond properties *Solderability
==Electroless Metal Deposition on Printed Circuit Boards==
== Electroless Metal Deposition on Printed Circuit Boards== Printed circuit boards are also used as circuit carriers. Since many of the conductive structures on the PCB are not electrically connected on the circuit board electroless processes are applied to create , the final surface coatings are produced using an electroless process (see chapter 7.1.2<xr id="fig:Electroless deposition on a printed circuit board"/>) (Chapter [[Electroless_Plating|Electroless Plating]]). Besides bonding to Nickel/Gold surfaces , soldering is the most widely used process to create conductive connections. This can also be performed on electroless deposited tin surface coatings. Fig. 9.2: Electroless deposition on a printed circuit board
<figure id="fig:Electroless deposition on a printed circuit board">
[[File:Electroless deposition on a printed circuit board.jpg|right|thumb|Figure 3: Electroless deposition on a printed circuit board]]
</figure>
==References==
Ganz, J.; Kaspar, F.: AlSi-plattierte Bänder für Bondverbindungen mit hoher Zuverlässigkeit in der Gehäusetechnik. PLUS 11 (2005) 2057 -2058
 
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